Guoshi Technology has applied for a new patent regarding IGBT leakage testing, and this technology may change current testing methods. The patent indicates that the device employs a modular design, is ...
Structural irregularities in the body of an IGBT module can cause immediate or eventual electrical failure. These irregularities may be detected by three-dimensional acoustic micro imaging. A lack of ...
System-in-package (SiP) and other advanced packaging technologies are putting more components together in tighter spaces than previously seen. Often these packages are contained in a module, which is ...
Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft
A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...
Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
Compared with traditional 3-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design supports an even loss distribution between semiconductor devices. Infineon ...
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