Abstract: The achievements in GaN HEMT technologies allow manufacturing transistors with output power up to 1000W in pulse mode. Self-heating in the transistor channel is a limiting factor for device ...
Infineon Technologies AG has unveiled its SiGe:C (Silicon-Germanium Carbon) process technology for high-performance radio frequency (RF) semiconductor devices. The SiGe:C technology is the foundation ...
Abstract: In this work, we present self-heating (SH) characterization and modeling of 130 nm Bipolar-CMOS-DMOS (BCD) technology node multi-finger Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) ...
There was an error while loading. Please reload this page. This project, conducted by Sami Fahim and Jordan Chometton, focuses on the design and optimization of a ...
Research hub Imec has achieved what it claims is a record-breaking achievement in RF gallium nitride on silicon (GaN-on-Si) transistor performance that could be a boon for next-generation 6G ...
Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G power amplifiers. Imec claims a new benchmark for mobile RF transistor ...
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